| PART |
Description |
Maker |
| MPXHZ6115A |
(MPXHZ6115A / MPXHA6115A) Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Motorola
|
| W83L518D05 |
Integrated Media Reader
|
Winbond
|
| W83L518D |
Integrated Media Reader
|
WINBOND[Winbond]
|
| USB2229-NE-XX |
5th Generation Hi-Speed USB Flash Media and IrDA Controller with Integrated Card Power FETs
|
http://
|
| USB2230-NE-03 USB2229-NE-03 USB2229-NU-03 USB2230- |
5TH GENERATION HI-SPEED USB FLASH MEDIA & IrDA CONTROLLER WITH INTEGRATED CARD POWER FETs 第五代高速USB闪存介质
|
SMSC, Corp.
SMSC Corporation
|
| USB2227-NU-05 |
4th Generation USB2.0 Flash Media Controller with Integrated Card Power FETs FLASH MEMORY DRIVE CONTROLLER, PQFP128
|
SMSC, Corp.
|
| USB2229-NU-02 USB2229-NE-02 USB2230-NE-02 USB2229- |
5th Generation Hi-Speed USB Flash Media and IrDA Controller with Integrated Card Power FETs FLASH MEMORY DRIVE CONTROLLER, PQFP128
|
SMSC Corporation
SMSC, Corp.
|
| FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ9160 FSJ9160 |
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil
|
| FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆，拉德硬，SEGR耐，N沟道功率MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| FSJ260R4 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R |
33A/ 250V/ 0.080 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
